FAR-INFRARED RECOMBINATION RADIATION FROM IMPACT-IONIZED SHALLOW DONORS IN GAAS

Radiation corresponding to transitions from excited shallow donor states and from conduction-band states to the donor ground state has been observed in impact-ionized GaAs at temperatures near 4.2°K. Spectral measurements show a main peak at a wavelength of 282 μ (4.4 meV), corresponding to a 2p→1s transition, and a broader continuum extending to higher photon energies. A total radiated power of 10-7 W has been measured corresponding to an external quantum efficiency of about 10-6. © 1969 The American Physical Society.