FAR-INFRARED RECOMBINATION RADIATION FROM IMPACT-IONIZED SHALLOW DONORS IN GAAS

被引:47
作者
MELNGAIL.I
STILLMAN, GE
DIMMOCK, JO
WOLFE, CM
机构
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
关键词
D O I
10.1103/PhysRevLett.23.1111
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Radiation corresponding to transitions from excited shallow donor states and from conduction-band states to the donor ground state has been observed in impact-ionized GaAs at temperatures near 4.2°K. Spectral measurements show a main peak at a wavelength of 282 μ (4.4 meV), corresponding to a 2p→1s transition, and a broader continuum extending to higher photon energies. A total radiated power of 10-7 W has been measured corresponding to an external quantum efficiency of about 10-6. © 1969 The American Physical Society.
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页码:1111 / &
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