FILAMENTARY IMPACT IONIZATION IN COMPENSATED GERMANIUM AT 4.2 DEGREES K

[1] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[2] HIGH FIELD MOBILITY IN GERMANIUM WITH IMPURITY SCATTERING DOMINANT [J]. PHYSICAL REVIEW, 1953, 90 (05): : 769 - 772

[3] MARTIN AVJ, 1958, ELECTRONIC IND, V17, P78

[4] THE CRYOSAR - A NEW LOW-TEMPERATURE COMPUTER COMPONENT [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (07): : 1207 - 1213

[5] MCWHORTER AL, 1960, 85G0006 MIT LINC LAB

[6] MELNGAILIS I, 1961, P IRE, V49, P352

[7] MELNGAILIS I, 1961, P I RADIO ENGRS, V49, P1616

[8] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[1] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[2] HIGH FIELD MOBILITY IN GERMANIUM WITH IMPURITY SCATTERING DOMINANT [J]. PHYSICAL REVIEW, 1953, 90 (05): : 769 - 772

[3] MARTIN AVJ, 1958, ELECTRONIC IND, V17, P78

[4] THE CRYOSAR - A NEW LOW-TEMPERATURE COMPUTER COMPONENT [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (07): : 1207 - 1213

[5] MCWHORTER AL, 1960, 85G0006 MIT LINC LAB

[6] MELNGAILIS I, 1961, P IRE, V49, P352

[7] MELNGAILIS I, 1961, P I RADIO ENGRS, V49, P1616

[8] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769