MAGNETIC FIELD EFFECTS ON HYDROGENIC DONOR STATES IN GAAS

被引：43

作者：

KAPLAN, R

KINCH, MA

SCOTT, WC

机构：

[1] Naval Research Laboratory, Washington

[2] Texas Instruments, Inc., Dallas

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 12期

关键词：

D O I：

10.1016/0038-1098(69)90435-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The far infrared photoconductivity of epitaxial n-type GaAs has been studied near 4.2 °K, as a function of magnetic field. The results show that the photoconductivity is largely due to transitions from the donor ground state to excited states. The observed transition energies are in good agreement with the results of effective mass theories. © 1969.

引用

页码：883 / &

共 15 条

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[2] DONOR SPECTROSCOPY IN GAAS
BOSOMWORTH, DR
CRANDALL, RS
ENSTROM, RE
[J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +
[3] BOYLE WS, 1961, PHYSICS CHEM SOLIDS, V19, P181
[4] ELLIOTT RJ, 1960, PHYS CHEM SOLIDS, V15, P196
[5] MAGNETOOPTICAL STUDIES OF SOLIDS USING FOURIERTRANSFORM SPECTROSCOPY
KAPLAN, R
[J]. APPLIED OPTICS, 1967, 6 (04): : 685 - &
[6] KAPLAN R, 1966, J PHYS SOC JPN, VS 21, P249
[7] KAPLAN R, TO BE PUBLISHED
[8] KLEINER WH, 1958, FEB LINC LABS PROG R
[9] LARSEN DM, 1968, PHYSICS CHEM SOLIDS, V29, P271
[10] IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES
REYNOLDS, RA
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (04) : 385 - &

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