GENERATION AND DETECTION OF 1012-HZ PHONONS IN N-TYPE GAAS

被引:9
作者
CRANDALL, RS
机构
[1] RCA Laboratories, Princeton, NJ
关键词
D O I
10.1016/0038-1098(69)90495-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A new technique is demonstrated for generating and detecting ultra high frequency phonons (≈ 1012 Hz). Phonons generated in a thin layer of n-type GaAs propagate through an insulating GaAs region and are detected by a similar n-type layer. The phonon generator and detector are electron-donor recombination and excitation respectively. © 1969.
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页码:1109 / &
相关论文
共 7 条
[1]   INTERACTION OF HIGH-ENERGY PHONONS IN GERMANIUM [J].
ASCARELLI, G .
PHYSICAL REVIEW LETTERS, 1960, 5 (08) :367-369
[2]   DONOR SPECTROSCOPY IN GAAS [J].
BOSOMWORTH, DR ;
CRANDALL, RS ;
ENSTROM, RE .
PHYSICS LETTERS A, 1968, A 28 (05) :320-+
[3]  
CRANDALL RS, 1968, B AM PHYS SOC, V13, P406
[4]  
LAMPERT MA, UNPUBLISHED
[5]   FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
MELNGAILIS, I ;
PARKER, CD ;
TANNENWALD, PE ;
DIMMOCK, JO .
APPLIED PHYSICS LETTERS, 1968, 13 (03) :83-+
[6]   STIMULATED EMISSION OF PHONONS BY SUPERSONIC ELECTRONS IN GERMANIUM [J].
ZYLBERSZTEJN, A .
PHYSICAL REVIEW LETTERS, 1967, 19 (15) :838-+
[7]  
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