SELECTIVE TISI2 DEPOSITION WITH NO SILICON SUBSTRATE CONSUMPTION BY RAPID THERMAL-PROCESSING IN A LPCVD REACTOR

Selective deposition of TiSi2 layers is achieved without silicon consumption from TiCl4/ SiH4/H2 chemistry by Rapid Thermal Processing in a cold wall, reduced pressure CVD reactor. This result requires careful adjustment of the reactant flow rates, and process time, for a narrow temperature range around 800° C. It is shown that thermodynamical or chemical reactions alone cannot explain this observed behaviour and that kinetics and kinematic analyses are necessary. A rate-limitation model involving the physical properties of TiCl4, assuming a relative independence of SiH4 behaviour provides a good description of the experimental results. © 1990 The Minerals, Metals and Materials Society.