LIMITED REACTION PROCESSING - SILICON EPITAXY

[1] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765

[2] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[3] FELDMAN LC, 1982, MATERIALS ANAL ION C

[4] SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (11) : 1561 - +

[5] EPITAXIAL-GROWTH OF SILICON FROM DICHLOROSILANE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1122 - &

[6] Lischner D. J., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P759

[7] MOSLEHI MM, UNPUB IEEE T ELECTRO

[8] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 205 - 207

[9] LOW-PRESSURE SILICON EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 903 - 908

[10] SEIDEL TE, 1984, VLSI SCI TECHNOLOGY, V84, P184

[1] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765

[2] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[3] FELDMAN LC, 1982, MATERIALS ANAL ION C

[4] SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (11) : 1561 - +

[5] EPITAXIAL-GROWTH OF SILICON FROM DICHLOROSILANE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1122 - &

[6] Lischner D. J., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P759

[7] MOSLEHI MM, UNPUB IEEE T ELECTRO

[8] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 205 - 207

[9] LOW-PRESSURE SILICON EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 903 - 908

[10] SEIDEL TE, 1984, VLSI SCI TECHNOLOGY, V84, P184