SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES

被引：23

作者：

GUPTA, DC

YEE, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 11期

关键词：

D O I：

10.1149/1.2411607

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1561 / +

页数：1

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