LOW-PRESSURE SILICON EPITAXY

被引：56

作者：

OGIRIMA, M ^{[1
]}

SAIDA, H ^{[1
]}

SUZUKI, M ^{[1
]}

MAKI, M ^{[1
]}

机构：

[1] HITACHI LTD,CTR RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 06期

关键词：

D O I：

10.1149/1.2133450

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：903 / 908

页数：6

相关论文

共 9 条

[1] DEINES JL, 1974, MAY M EL SOC SAN FRA, P161
[2] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
SEVERIN, PJW
BREKEL, CHJV
PEEK, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +
[3] INHIBITION OF SILICON GROWTH RATE DURING DEPOSITION OF ARSENIC-DOPED EPITAXIAL SILICON LAYERS ON SILICON BY PYROLYSIS OF SILANE
FARROW, RFC
FILBY, JD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 149 - &
[4] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[5] SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
HELM, RF
[J]. SURFACE SCIENCE, 1972, 30 (02) : 310 - +
[6] SILICON EPITAXIAL WAFER WITH ABRUPT INTERFACE BY 2-STEP EPITAXIAL-GROWTH TECHNIQUE
ISHII, T
KONDO, A
SHIRAHATA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1523 - 1531
[7] POGGE HB, CHEMICAL VAPOR DEPOS
[8] SUGAWARA K, CHEMICAL VAPOR DEPOS
[9] GAS-FLOW PATTERN AND MASS-TRANSFER ANALYSIS IN A HORIZONTAL FLOW REACTOR FOR CHEMICAL VAPOR-DEPOSITION
TAKAHASHI, R
SUGAWARA, K
KOGA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1406 - +