HELD EFFECT DEVICES BASED ON METAL-INSULATOR-YBa2Cu3O7-x FILMS

被引：7

作者：

Brorsson, G. ^{[1
]}

Boikov, Yu. ^{[1
,2
]}

Ivanov, Z. G. ^{[1
]}

Claeson, T. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.234012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have made a comparative study of the electrical field effect in both ultrathin (4.5nm), and comparatively thick (200 nm) polycrystalline YBa2Cu3O7-x films. In the first case SrTiO3 was used as gate insulator, and in the second case (Pb,Zr)TiO3. In the ultrathin film we increased and decreased the critical current up to 2.4%, by applying negative and positive voltages of 80V. In the polycrystalline film (Tc= 84.5K) we measured an increase of the normal resistance of 7%, when applying a gate voltage of +1.78V.

引用

页码：2922 / 2924

页数：3

共 7 条

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