POINT-CONTACT SOLAR-CELLS - MODELING AND EXPERIMENT

[11] INTERDIGITATED BACK CONTACT SOLAR-CELL - SILICON SOLAR-CELL FOR USE IN CONCENTRATED SUNLIGHT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 337 - 342

[12] MATHEWS S, 1964, MATH METHODS PHYSICS, P322

[13] MOLL JL, 1964, PHYSICS SEMICONDUCTO, P150

[14] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P111

[15] Schwartz R. J., 1983, COMMUNICATION

[16] THE DEGRADATION OF HIGH-INTENSITY BSF SOLAR-CELL FILL FACTORS DUE TO A LOSS OF BASE CONDUCTIVITY MODULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 264 - 269

[17] REVIEW OF SILICON SOLAR-CELLS FOR HIGH-CONCENTRATIONS [J]. SOLAR CELLS, 1982, 6 (01): : 17 - 38

[18] SILICON POINT CONTACT CONCENTRATOR SOLAR-CELLS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 405 - 407

[19] SPITZER MB, 1985, 13TH P PHOT CONC PRO, P216

[20] TEMPERATURE-DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5111 - 5120

[11] INTERDIGITATED BACK CONTACT SOLAR-CELL - SILICON SOLAR-CELL FOR USE IN CONCENTRATED SUNLIGHT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 337 - 342

[12] MATHEWS S, 1964, MATH METHODS PHYSICS, P322

[13] MOLL JL, 1964, PHYSICS SEMICONDUCTO, P150

[14] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P111

[15] Schwartz R. J., 1983, COMMUNICATION

[16] THE DEGRADATION OF HIGH-INTENSITY BSF SOLAR-CELL FILL FACTORS DUE TO A LOSS OF BASE CONDUCTIVITY MODULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 264 - 269

[17] REVIEW OF SILICON SOLAR-CELLS FOR HIGH-CONCENTRATIONS [J]. SOLAR CELLS, 1982, 6 (01): : 17 - 38

[18] SILICON POINT CONTACT CONCENTRATOR SOLAR-CELLS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 405 - 407

[19] SPITZER MB, 1985, 13TH P PHOT CONC PRO, P216

[20] TEMPERATURE-DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5111 - 5120