THEORETICAL-STUDY OF THE SI-A CENTER

[1] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[2] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018

[3] FAZZIO A, 1979, J PHYS C, V12

[4] FAZZIO A, 1979, INT J QUANTUM CHEM S, V13

[5] QUANTUM CHEMISTRY [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1975, 26 : 39 - 57

[6] MASTEROV VF, 1978, SOV PHYS SEMICOND+, V12, P363

[7] MILEVSKII LS, 1976, SOV PHYS SEMICOND+, V10, P763

[8] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990

[9] THEORY FOR BINDING-ENERGIES OF FIRST-ROW, DEEP DONORS IN GAP AND SI [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (11) : 1255 - 1258

[10] OPTIMIZATION OF STATISTICAL EXCHANGE PARAMETER-ALPHA FOR FREE ATOMS H THROUGH NB [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (07): : 2466 - &

[1] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[2] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018

[3] FAZZIO A, 1979, J PHYS C, V12

[4] FAZZIO A, 1979, INT J QUANTUM CHEM S, V13

[5] QUANTUM CHEMISTRY [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1975, 26 : 39 - 57

[6] MASTEROV VF, 1978, SOV PHYS SEMICOND+, V12, P363

[7] MILEVSKII LS, 1976, SOV PHYS SEMICOND+, V10, P763

[8] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990

[9] THEORY FOR BINDING-ENERGIES OF FIRST-ROW, DEEP DONORS IN GAP AND SI [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (11) : 1255 - 1258

[10] OPTIMIZATION OF STATISTICAL EXCHANGE PARAMETER-ALPHA FOR FREE ATOMS H THROUGH NB [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (07): : 2466 - &