GAXIN1-XP MULTIPLE-QUANTUM-WIRE HETEROSTRUCTURES PREPARED BY THE STRAIN INDUCED LATERAL LAYER ORDERING PROCESS

被引：35

作者：

CHEN, AC ^{[1
]}

MOY, AM ^{[1
]}

PEARAH, PJ ^{[1
]}

HSIEH, KC ^{[1
]}

CHENG, KY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.108678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the in situ growth of GaxIn1-xP multiple-quantum-wire (MQWR) structures by gas source molecular beam epitaxy. The MQWRs were formed through a strain induced lateral layer ordering (SILO) process occurring spontaneously when (GaP)n/(InP)n short-period superlattices were grown on (100)-oriented on-axis GaAs substrates. In one sample, cross-sectional transmission electron microscopy estimated average quantum-wire cross sections of 50 angstrom x 100 angstrom with lengths of over 3000 angstrom leading to a linear density of 100 wires/mum. The existence of the MQWRs is also supported by polarized photoluminescence spectroscopy. Anisotropy ratios for two orthogonal polarizations were measured to be an order of magnitude larger than any previously reported. These data support the existence of MQWRs and demonstrate that the SILO growth process is a consistent and reproducible method of MQWR fabrication.

引用

页码：1359 / 1361

页数：3

共 15 条

[1] THE GAS SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALXGA1-XP ON (100) GAP [J].