HIGH-PERFORMANCE INGAAS GAAS QUANTUM-WELL INFRARED PHOTODETECTORS

被引：22

作者：

GUNAPALA, SD ^{[1
]}

BANDARA, KMSV ^{[1
]}

LEVINE, BF ^{[1
]}

SARUSI, G ^{[1
]}

PARK, JS ^{[1
]}

LIN, TL ^{[1
]}

PIKE, WT ^{[1
]}

LIU, JK ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the optical and transport properties of In0.2Ga0.8As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8X10(10) cm square-root Hz/W (at lambda(p)=16.7 mum) were achieved at temperature T=40 K.

引用

页码：3431 / 3433

页数：3

共 14 条

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