VERY LONG-WAVELENGTH INXGA1-XAS/GAAS QUANTUM-WELL INFRARED PHOTODETECTORS

被引：41

作者：

GUNAPALA, SD ^{[1
]}

BANDARA, KMSV ^{[1
]}

LEVINE, BF ^{[1
]}

SARUSI, G ^{[1
]}

SIVCO, DL ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 17期

关键词：

D O I：

10.1063/1.111646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a long wavelength (lambda(c) = 20 mum) quantum well infrared photodetector using nonlattice matched InxGa1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D* = 9.7 X 10(10) cm square-root Hz/W at T = 10 K has been achieved.

引用

页码：2288 / 2290

页数：3

共 11 条

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