INSITU MEASUREMENTS OF CRITICAL LAYER THICKNESS AND OPTICAL STUDIES OF INGAAS QUANTUM WELLS GROWN ON GAAS SUBSTRATES

被引：80

作者：

ELMAN, B

KOTELES, ES

MELMAN, P

JAGANNATH, C

LEE, J

DUGGER, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期

关键词：

D O I：

10.1063/1.102279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1659 / 1661

页数：3

共 13 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

ANDERSON, NG ;

LAIDIG, WD ;

KOLBAS, RM ;

LO, YC .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367

[2] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

PHYSICAL REVIEW B, 1988, 37 (08) :4032-4038

[3] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754

[4] GROWTH AND CHARACTERIZATION OF (111)ORIENTED GAINAS GAAS STRAINED-LAYER SUPERLATTICES [J].

BEERY, JG ;

LAURICH, BK ;

MAGGIORE, CJ ;

SMITH, DL ;

ELCESS, K ;

FONSTAD, CG ;

MAILHIOT, C .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :233-235

[5] PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

BERTOLET, DC ;

HSU, JK ;

JONES, SH ;

KEI, ML .

APPLIED PHYSICS LETTERS, 1988, 52 (04) :293-295

[6] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

[7] OBSERVATION OF COMPRESSIVE AND TENSILE STRAINS IN INGAAS GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY [J].

GAL, M ;

ORDERS, PJ ;

USHER, BF ;

JOYCE, MJ ;

TANN, J .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :113-115

[8] OPTICAL-PROPERTIES OF (100)-ORIENTED AND (111)-ORIENTED GAINAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

LAURICH, BK ;

ELCESS, K ;

FONSTAD, CG ;

BEERY, JG ;

MAILHIOT, C ;

SMITH, DL .

PHYSICAL REVIEW LETTERS, 1989, 62 (06) :649-652

[9] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].

LEWIS, BF ;

LEE, TC ;

GRUNTHANER, FJ ;

MADHUKAR, A ;

FERNANDEZ, R ;

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424

[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF INGAAS AND INALAS ON INP - APPLICATION TO PSEUDOMORPHIC HETEROSTRUCTURES [J].

LIEVIN, JL ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1173-1175

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