共 14 条
- [1] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4032 - 4038
- [2] ELCESS K, 1988, J VAC SCI TECHNOL B, V6, P636
- [4] LAURICH BK, IN PRESS SUPERLATT M
- [5] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES [J]. PHYSICAL REVIEW B, 1987, 35 (03): : 1242 - 1259
- [6] ELECTROMODULATION OF THE ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF [111]-GROWTH-AXIS SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 37 (17): : 10415 - 10418
- [7] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8360 - 8372
- [8] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 8298 - 8301
- [9] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1987, 36 (15): : 8165 - 8168