THE INTERFACIAL MORPHOLOGY OF STRAINED EPITAXIAL INXGA1-XAS/GAAS

被引：89

作者：

YAO, JY ^{[1
]}

ANDERSSON, TG ^{[1
]}

DUNLOP, GL ^{[1
]}

机构：

[1] UNIV QUEENSLAND,DEPT MIN & MET ENGN,ST LUCIA,QLD 4067,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.348700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of strained layers of In(x)Ga(1-x)As/GaAs grown by molecular-beam epitaxy has been investigated by transmission electron microscopy. It was found that the formation of irregular interfacial morphologies of the In(x)Ga(1-x)As layers was due to a transition in growth mode from two-dimensional (layer-by-layer growth) to three-dimensional nucleation via island formation. It was also found that the occurrence of irregular growth surfaces of epitaxial layers was dependent upon inhomogeneous lattice strains induced by the formation of islands. A possible role of lattice strain for the formation of irregular growth surfaces was also discussed.

引用

页码：2224 / 2230

页数：7

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