PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE

被引：140

作者：

BROEKAERT, TPE ^{[1
]}

LEE, W ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期

关键词：

D O I：

10.1063/1.99951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1545 / 1547

页数：3

共 21 条

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[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
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[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
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[4] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES
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[5] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088
[6] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO
HUANG, CI
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EVANS, KR
STUTZ, CE
JONES, RL
CHENEY, ME
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123
[7] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE
INATA, T
MUTO, S
NAKATA, Y
FUJII, T
OHNISHI, H
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L983 - L985
[8] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE
INATA, T
MUTO, S
NAKATA, Y
SASA, S
FUJII, T
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1332 - L1334
[9] PHOTOLUMINESCENCE STUDY OF INXAL1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
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IGUCHI, N
CHIKA, S
NAKAYAMA, M
SANO, N
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 588 - 592
[10] THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY
LEE, W
FONSTAD, CG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 536 - 538

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