THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY

被引：39

作者：

LEE, W ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：536 / 538

页数：3

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