THE BEHAVIOR OF UNINTENTIONAL IMPURITIES IN GA0.47IN0.53AS GROWN BY MBE

被引：12

作者：

BROWN, AS

PALMATEER, SC

WICKS, GW

EASTMAN, LF

CALAWA, AR

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 03期

关键词：

D O I：

10.1007/BF02661228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：367 / 378

页数：12

共 10 条

[1]

BROWN AS, 1984, SEMIINSULATING 3 5 M

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[3]

COX HM, 1980, SEMIINSULATING 3 5 M

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[6] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] HEAT-TREATMENT OF SEMI-INSULATING CHROMIUM-DOPED GALLIUM-ARSENIDE SUBSTRATES WITH CONVERTED SURFACE REMOVED PRIOR TO MOLECULAR-BEAM EXPITAXIAL GROWTH [J].

PALMATEER, SC ;

SCHAFF, WJ ;

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EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :183-185

[9] POSTGROWTH HEAT-TREATMENT EFFECTS IN HIGH-PURITY LIQUID-PHASE-EPITAXIAL IN0.53GA0.47AS [J].

RAO, MV ;

BHATTACHARYA, PK .

ELECTRONICS LETTERS, 1983, 19 (06) :196-197

[10] OPTICAL-QUALITY GAINAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WICKS, G ;

WOOD, CEC ;

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JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) :435-440

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