HEAT-TREATMENT OF SEMI-INSULATING CHROMIUM-DOPED GALLIUM-ARSENIDE SUBSTRATES WITH CONVERTED SURFACE REMOVED PRIOR TO MOLECULAR-BEAM EXPITAXIAL GROWTH

被引：10

作者：

PALMATEER, SC

SCHAFF, WJ

GALUSKA, A

BERRY, JD

EASTMAN, LF

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] CORNELL UNIV,DEPT CHEM,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.93874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：183 / 185

页数：3

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[4]

RHODEN H, 1982, J ELECTRON MASTER, V11, P517

[5]

XIN SH, 1982, IEEE ELECTRON LETT, V18, P3

[6]

ZUCCA R, 1976, I PHYS C SER B, V33, P228