MANGANESE INCORPORATION BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE

被引：27

作者：

DESIMONE, D

WOOD, CEC

EVANS, CA

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4938 / 4942

页数：5

共 21 条

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[5] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].

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[6]

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[7]

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[8] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

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[9]

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[10] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS AND GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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