EXTREMELY RAPID OUTDIFFUSION OF N-TYPE IMPURITIES IN INP

被引:9
作者
CHIN, AK [1 ]
CAMLIBEL, I [1 ]
DUTT, BV [1 ]
SWAMINATHAN, V [1 ]
BONNER, WA [1 ]
BALLMAN, AA [1 ]
机构
[1] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.93781
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:901 / 903
页数:3
相关论文
共 15 条
[1]  
ALJASSIM MM, 1981, I PHYS C SER, V60, P357
[3]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[4]  
CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6
[5]   ZN-DOPED VAPOR-GROWN INP [J].
CHEVRIER, J ;
HUBER, A ;
LINH, NT .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :815-817
[6]   EPITAXIAL-GROWTH OF CD-DOPED INP FROM THE VAPOR [J].
CHEVRIER, J ;
HORACHE, E ;
GOLDSTEIN, L ;
LINH, NT .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3247-3251
[7]   IMAGING OF DISLOCATIONS IN INP USING TRANSMISSION CATHODOLUMINESCENCE [J].
CHIN, AK ;
MAHAJAN, S ;
BALLMAN, AA .
APPLIED PHYSICS LETTERS, 1979, 35 (10) :784-786
[8]   INVESTIGATION OF IMPURITY VARIATIONS BY CATHODOLUMINESCENCE IMAGING - APPLICATION TO GASB-TE [J].
CHIN, AK ;
BONNER, WA .
APPLIED PHYSICS LETTERS, 1982, 40 (03) :248-251
[9]   OPEN AMPOULE DIFFUSION IN INP [J].
FAVENNEC, PN ;
HENRY, L ;
GAUNEAU, M ;
LHARIDON, H ;
PELOUS, G .
ELECTRONICS LETTERS, 1980, 16 (22) :832-833
[10]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711