INVESTIGATION OF IMPURITY VARIATIONS BY CATHODOLUMINESCENCE IMAGING - APPLICATION TO GASB-TE

被引：14

作者：

CHIN, AK

BONNER, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.93041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：248 / 251

页数：4

共 22 条

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[4]

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[9] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M [J].

KAWAGUCHI, H ;

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TOYOSHIMA, Y ;

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ELECTRONICS LETTERS, 1979, 15 (21) :669-670

[10] MULTIPLICATION OF A THREADING DISLOCATION IN THE INP-INGAASP-INP DOUBLE HETEROSTRUCTURE GROWN ON INP(111)B SUBSTRATE [J].

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