TRANSMISSION CATHODOLUMINESCENCE

被引：4

作者：

CHIN, AK

TEMKIN, H

MAHAJAN, S

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1981年 / 60卷 / 09期

关键词：

D O I：

10.1002/j.1538-7305.1981.tb00316.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2187 / 2226

页数：40

共 73 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

BALK LJ, 1976, APR P SEM S ILL I TE, P257

[3]

BROWN GT, 1891, J CRYST GROWTH, V51, P369

[4]

CAPASSO F, 1979, DEC P INT EL DEV M, P647

[5] INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION [J].

CASEY, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :153-+

[6] IMAGING OF DISLOCATIONS IN INP USING TRANSMISSION CATHODOLUMINESCENCE [J].

CHIN, AK ;

MAHAJAN, S ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :784-786

[7] EVALUATION OF DEFECTS IN INP AND INGAASP BY TRANSMISSION CATHODOLUMINESCENCE [J].

CHIN, AK ;

TEMKIN, H ;

MAHAJAN, S ;

BONNER, WA ;

BALLMAN, AA ;

DENTAI, AG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5707-5709

[8] STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS [J].

CHIN, AK ;

KING, WC ;

LEONARD, TJ ;

ROEDEL, RJ ;

ZIPFEL, CL ;

KERAMIDAS, VG ;

ERMANIS, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :661-669

[9]

CHIN AK, 1979, APPL PHYS LETT, V34, P476, DOI 10.1063/1.90840

[10] EVALUATION OF DEFECTS AND DEGRADATION IN GAAS-GAALAS WAFERS USING TRANSMISSION CATHODOLUMINESCENCE [J].

CHIN, AK ;

KERAMIDAS, VG ;

JOHNSTON, WD ;

MAHAJAN, S ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :978-983

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