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THE EFFECT OF AS-4 OVERPRESSURE ON THE INCORPORATION OF IN INTO AL1-XINXAS GROWN ON (100) INP BY MOLECULAR-BEAM EPITAXY
被引:8
作者
:
DAVIES, GJ
论文数:
0
引用数:
0
h-index:
0
DAVIES, GJ
ANDREWS, DA
论文数:
0
引用数:
0
h-index:
0
ANDREWS, DA
机构
:
来源
:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
1984年
/ 17卷
/ 08期
关键词
:
D O I
:
10.1088/0022-3727/17/8/008
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L143 / L146
页数:4
相关论文
共 12 条
[1]
BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
CHENG, KY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
BONNER, WA
论文数:
0
引用数:
0
h-index:
0
BONNER, WA
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(07)
: 4672
-
4675
[2]
TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
CHENG, KY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
WAGNER, WR
论文数:
0
引用数:
0
h-index:
0
WAGNER, WR
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(10)
: 6328
-
6330
[3]
DAVIES GJ, 1984, J VAC SCI TECHNOL
[4]
FAKTOR MM, 1980, CURRENT TOPICS MAT S, V6, pCH1
[5]
ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEE, TP
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BURRUS, CA
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHENG, KY
MANCHON, DD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MANCHON, DD
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(08)
: 730
-
731
[6]
ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
MILLER, BI
MCFEE, JH
论文数:
0
引用数:
0
h-index:
0
MCFEE, JH
MARTIN, RJ
论文数:
0
引用数:
0
h-index:
0
MARTIN, RJ
TIEN, PK
论文数:
0
引用数:
0
h-index:
0
TIEN, PK
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(01)
: 44
-
47
[7]
LIQUID-PHASE EPITAXIAL-GROWTH CONDITIONS OF LATTICE-MATCHED AL0.48IN0.52AS AND ALXGAYIN1-X-YAS LAYERS WITHOUT SURFACE-DEFECTS
NAKAJIMA, K
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, K
TANAHASHI, T
论文数:
0
引用数:
0
h-index:
0
TANAHASHI, T
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
KOMIYA, S
AKITA, K
论文数:
0
引用数:
0
h-index:
0
AKITA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(09)
: 1927
-
1933
[8]
DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE
OHNO, H
论文数:
0
引用数:
0
h-index:
0
OHNO, H
BARNARD, J
论文数:
0
引用数:
0
h-index:
0
BARNARD, J
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
WOOD, CEC
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
[J].
ELECTRON DEVICE LETTERS,
1980,
1
(08):
: 154
-
155
[9]
SOLID-LIQUID EQUILIBRIA CALCULATIONS FOR LPE OF ALVGA1-U-VINUAS ON INP
PEREA, EH
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
PEREA, EH
FONSTAD, CG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
FONSTAD, CG
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
QUILLEC, M
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(08)
: 4577
-
4579
[10]
AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
TSANG, WT
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(06)
: 3861
-
3864
←
1
2
→
共 12 条
[1]
BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
CHENG, KY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
BONNER, WA
论文数:
0
引用数:
0
h-index:
0
BONNER, WA
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(07)
: 4672
-
4675
[2]
TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
CHENG, KY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
WAGNER, WR
论文数:
0
引用数:
0
h-index:
0
WAGNER, WR
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(10)
: 6328
-
6330
[3]
DAVIES GJ, 1984, J VAC SCI TECHNOL
[4]
FAKTOR MM, 1980, CURRENT TOPICS MAT S, V6, pCH1
[5]
ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEE, TP
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BURRUS, CA
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHENG, KY
MANCHON, DD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MANCHON, DD
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(08)
: 730
-
731
[6]
ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
MILLER, BI
MCFEE, JH
论文数:
0
引用数:
0
h-index:
0
MCFEE, JH
MARTIN, RJ
论文数:
0
引用数:
0
h-index:
0
MARTIN, RJ
TIEN, PK
论文数:
0
引用数:
0
h-index:
0
TIEN, PK
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(01)
: 44
-
47
[7]
LIQUID-PHASE EPITAXIAL-GROWTH CONDITIONS OF LATTICE-MATCHED AL0.48IN0.52AS AND ALXGAYIN1-X-YAS LAYERS WITHOUT SURFACE-DEFECTS
NAKAJIMA, K
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, K
TANAHASHI, T
论文数:
0
引用数:
0
h-index:
0
TANAHASHI, T
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
KOMIYA, S
AKITA, K
论文数:
0
引用数:
0
h-index:
0
AKITA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(09)
: 1927
-
1933
[8]
DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE
OHNO, H
论文数:
0
引用数:
0
h-index:
0
OHNO, H
BARNARD, J
论文数:
0
引用数:
0
h-index:
0
BARNARD, J
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
WOOD, CEC
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
[J].
ELECTRON DEVICE LETTERS,
1980,
1
(08):
: 154
-
155
[9]
SOLID-LIQUID EQUILIBRIA CALCULATIONS FOR LPE OF ALVGA1-U-VINUAS ON INP
PEREA, EH
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
PEREA, EH
FONSTAD, CG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
FONSTAD, CG
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
QUILLEC, M
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(08)
: 4577
-
4579
[10]
AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
TSANG, WT
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(06)
: 3861
-
3864
←
1
2
→