ELECTRICAL AND OPTICAL-PROPERTIES OF SI-DOPED AND SN-DOPED INXGA1-XAS(X CONGRUENT-TO 0.53) GROWN BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

KUBIAK, RA ^{[1
]}

HARRIS, JJ ^{[1
]}

DAWSON, P ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.333072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：598 / 600

页数：3

共 15 条

[1] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[2] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6328-6330

[3] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4411-4415

[4] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[5]

DAWSON PH, UNPUB

[6] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J].

DRUMINSKI, M ;

WOLF, HD ;

ZSCHAUER, KH ;

WITTMAACK, K .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :318-324

[7] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DRUMMOND, TJ ;

LYONS, WG ;

FISCHER, R ;

THORNE, RE ;

MORKOC, H ;

HOPKINS, CG ;

EVANS, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04) :957-960

[8] NUCLEATION EFFECTS DURING MBE GROWTH OF SN-DOPED GAAS [J].

HARRIS, JJ ;

JOYCE, BA ;

GOWERS, JP ;

NEAVE, JH .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (01) :63-71

[9]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P428

[10]

KUBIAK RAA, UNPUB

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