SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：49

作者：

CHENG, KY ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4411 / 4415

页数：5

共 25 条

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[8]

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