NUCLEATION EFFECTS DURING MBE GROWTH OF SN-DOPED GAAS

[1] INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4296 - 4304

[2] AMBRIDGE T, 1975, I PHYS C SER, V24, P320

[3] ADSORPTION OF ZN ON GAAS [J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412

[4] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[5] DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J]. SURFACE SCIENCE, 1979, 85 (02) : 471 - 492

[6] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[7] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[8] FARROW RFC, 1980, 8TH INT VAC C CANN F

[9] FOXON CT, COMMUNICATION

[10] Hagg G., 1935, PHILOS MAG, V20, P913

[1] INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4296 - 4304

[2] AMBRIDGE T, 1975, I PHYS C SER, V24, P320

[3] ADSORPTION OF ZN ON GAAS [J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412

[4] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[5] DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J]. SURFACE SCIENCE, 1979, 85 (02) : 471 - 492

[6] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[7] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[8] FARROW RFC, 1980, 8TH INT VAC C CANN F

[9] FOXON CT, COMMUNICATION

[10] Hagg G., 1935, PHILOS MAG, V20, P913