NUCLEATION EFFECTS DURING MBE GROWTH OF SN-DOPED GAAS

[11] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[12] HARRIS JJ, 1981, UNPUB 1ST EUR MBE WO

[13] GROWTH AND DOPING KINETICS IN MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 17 - 23

[14] AES STUDY OF VERY 1ST STAGES OF CONDENSATION OF GOLD-FILMS ON SILICON(111) SURFACES [J]. SURFACE SCIENCE, 1977, 69 (01) : 295 - 300

[15] ISOTHERMAL DESORPTION SPECTROSCOPY FOR STUDY OF 2-DIMENSIONAL CONDENSED PHASES - INVESTIGATION OF AU (DEPOSIT)-SI(111) (SUBSTRATE) SYSTEM - APPLICATION TO XE-(0001)GRAPHITE SYSTEM [J]. SURFACE SCIENCE, 1977, 65 (01) : 261 - 276

[16] COHESIVE ENERGY OF 2-DIMENSIONAL SI(111)-3 X 1 AG AND SI(111)SQUARE ROOT 3-R(30-DEGREES)AG PHASES OF SILVER (DEPOSIT)-SILICON(111) (SUBSTRATE) SYSTEM [J]. SURFACE SCIENCE, 1978, 72 (02) : 405 - 422

[17] GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 302 - 308

[18] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 311 - 312

[19] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 387 - 397

[20] SURFACE SEGREGATION OF SN DURING MBE OF N-TYPE GAAS ESTABLISHED BY SIMS AND AES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 255 - 259

[11] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[12] HARRIS JJ, 1981, UNPUB 1ST EUR MBE WO

[13] GROWTH AND DOPING KINETICS IN MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 17 - 23

[14] AES STUDY OF VERY 1ST STAGES OF CONDENSATION OF GOLD-FILMS ON SILICON(111) SURFACES [J]. SURFACE SCIENCE, 1977, 69 (01) : 295 - 300

[15] ISOTHERMAL DESORPTION SPECTROSCOPY FOR STUDY OF 2-DIMENSIONAL CONDENSED PHASES - INVESTIGATION OF AU (DEPOSIT)-SI(111) (SUBSTRATE) SYSTEM - APPLICATION TO XE-(0001)GRAPHITE SYSTEM [J]. SURFACE SCIENCE, 1977, 65 (01) : 261 - 276

[16] COHESIVE ENERGY OF 2-DIMENSIONAL SI(111)-3 X 1 AG AND SI(111)SQUARE ROOT 3-R(30-DEGREES)AG PHASES OF SILVER (DEPOSIT)-SILICON(111) (SUBSTRATE) SYSTEM [J]. SURFACE SCIENCE, 1978, 72 (02) : 405 - 422

[17] GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 302 - 308

[18] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 311 - 312

[19] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 387 - 397

[20] SURFACE SEGREGATION OF SN DURING MBE OF N-TYPE GAAS ESTABLISHED BY SIMS AND AES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 255 - 259