ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO

[1] THEORY OF RESONANT TUNNELING IN A VARIABLY SPACED MULTIQUANTUM WELL STRUCTURE - AN AIRY FUNCTION-APPROACH [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 614 - 623

[2] MILLIMETER-BAND OSCILLATIONS BASED ON RESONANT TUNNELING IN A DOUBLE-BARRIER DIODE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 83 - 85

[3] IMPORTANCE OF SPACE-CHARGE EFFECTS IN RESONANT TUNNELING DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 612 - 614

[4] CAPASSO F, 1986, P INT ELECTRON DEVIC

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[6] FUTATSUGI T, 1986, P INT ELECTRON DEVIC, V86, P286

[7] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088

[8] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[9] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07): : L577 - L579

[10] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 73 - 75

[1] THEORY OF RESONANT TUNNELING IN A VARIABLY SPACED MULTIQUANTUM WELL STRUCTURE - AN AIRY FUNCTION-APPROACH [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 614 - 623

[2] MILLIMETER-BAND OSCILLATIONS BASED ON RESONANT TUNNELING IN A DOUBLE-BARRIER DIODE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 83 - 85

[3] IMPORTANCE OF SPACE-CHARGE EFFECTS IN RESONANT TUNNELING DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 612 - 614

[4] CAPASSO F, 1986, P INT ELECTRON DEVIC

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[6] FUTATSUGI T, 1986, P INT ELECTRON DEVIC, V86, P286

[7] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088

[8] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[9] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07): : L577 - L579

[10] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 73 - 75