OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES

被引：84

作者：

NAKAGAWA, T

IMAMOTO, H

KOJIMA, T

OHTA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.97356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 75

页数：3

共 12 条

[1] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

COLLINS, RT ;

MCGILL, TC ;

BURNHAM, RD ;

PONCE, FA .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :285-287

[2] SEQUENTIAL RESONANT TUNNELING THROUGH A MULTIQUANTUM WELL SUPERLATTICE [J].

CAPASSO, F ;

MOHAMMED, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :478-480

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[4] TUNNELING BETWEEN 2 STRONGLY COUPLED SUPERLATTICES [J].

DAVIES, RA ;

KELLY, MJ ;

KERR, TM .

PHYSICAL REVIEW LETTERS, 1985, 55 (10) :1114-1116

[5]

KONDO K, 1984, P M TECHNOL GROUP SO, P65

[6]

LURYI S, 1985, P INT ELECTRON DEVIC, V85, P666

[7] OBSERVATION OF RESONANT TUNNELING VIA 1ST EXCITED-LEVEL IN DOUBLE-BARRIER DIODES [J].

NAKAGAWA, T ;

IMAMOTO, H ;

KAWAI, NJ ;

KOJIMA, T ;

OHTA, K .

ELECTRONICS LETTERS, 1986, 22 (08) :406-407

[8] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION [J].

SAKAMOTO, T ;

FUNABASHI, H ;

OHTA, K ;

NAKAGAWA, T ;

KAWAI, NJ ;

KOJIMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L657-L659

[9]

SCHEWCHUK TJ, 1985, APPL PHYS LETT, V46, P508

[10] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

← 1 2 →