OBSERVATION OF RESONANT TUNNELING VIA 1ST EXCITED-LEVEL IN DOUBLE-BARRIER DIODES

被引：4

作者：

NAKAGAWA, T

IMAMOTO, H

KAWAI, NJ

KOJIMA, T

OHTA, K

机构：

[1] Electrotechnical Lab, Ibaraki, Jpn, Electrotechnical Lab, Ibaraki, Jpn

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 08期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS;

D O I：

10.1049/el:19860277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two clear resonance peaks for each bias direction accompanying negative differential resistance are observed in the Al//0//. //3Ga//0//. //7As/GaAs/Al//0//. //3Ga//0//. //7As double-barrier diode of 24 to 26 monolayer well thickness. These two peaks are found to be the resonant tunneling through the ground and first excited energy levels in the well.

引用

页码：406 / 407

页数：2

共 6 条

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