PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE

被引：140

作者：

BROEKAERT, TPE ^{[1
]}

LEE, W ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期

关键词：

D O I：

10.1063/1.99951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1545 / 1547

页数：3

共 21 条

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[12] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[13] QUANTUM-WELL WIDTH DEPENDENCE OF NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.52AL0.48AS/IN0.53GA0.47AS RESONANT TUNNELING BARRIERS GROWN BY MBE
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[14] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE
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[15] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT
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[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (14) : 1622 - 1622
[16] CONDUCTION-BAND EDGE DISCONTINUITY OF IN0.52GA0.48AS/IN0.52(GA1-XALX)0.48AS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) HETEROSTRUCTURES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L648 - L650
[17] TUNNELING IN A FINITE SUPERLATTICE
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ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564
[18] TSUCHIYA M, 1986, APPL PHYS LETT, V49, P88, DOI 10.1063/1.97360
[19] PRECISE CONTROL OF RESONANT TUNNELING CURRENT IN ALAS/GAAS/ALAS DOUBLE BARRIER DIODES WITH ATOMICALLY-CONTROLLED BARRIER WIDTHS
TSUCHIYA, M
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L185 - L187
[20] ROOM-TEMPERATURE OBSERVATION OF DIFFERENTIAL NEGATIVE-RESISTANCE IN AN ALAS/GAAS/ALAS RESONANT TUNNELING DIODE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L466 - L468

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