ROOM-TEMPERATURE OBSERVATION OF DIFFERENTIAL NEGATIVE-RESISTANCE IN AN ALAS/GAAS/ALAS RESONANT TUNNELING DIODE

被引：123

作者：

TSUCHIYA, M

SAKAKI, H

YOSHINO, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L466 / L468

页数：3

共 9 条

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APPLIED PHYSICS LETTERS, 1985, 46 (10) :973-975

[4] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].

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[5]

SAKAKI H, 1984, 1983 P INT S F QUANT, P94

[6]

SHEWCHUK TJ, 1985, APPL PHYS LETT, V46, P285

[7] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

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TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[8] QUANTUM WELL OSCILLATORS [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (12) :1319-1321

[9] TUNNELING IN A FINITE SUPERLATTICE [J].

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APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564

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