LOWER-TEMPERATURE PLASMA-ETCHING OF CU FILMS USING INFRARED RADIATION

被引：39

作者：

HOSOI, N

OHSHITA, Y

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 19期

关键词：

D O I：

10.1063/1.110401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The etching of Cu films is achieved at lower temperature (150-degrees-C) with Cl2 plasma by IR light radiation. Anisotropic fine Cu patterns are obtained. The etch rate is 4000 angstrom/min and there are no microloading effects. It is considered that the etching temperature lowering and the anisotropy are realized by the IR light enhancement of CuCl(x) desorption.

引用

页码：2703 / 2704

页数：2

共 4 条

[1] LOW-TEMPERATURE COPPER ETCHING VIA REACTIONS WITH CL2 AND PET3 UNDER ULTRAHIGH-VACUUM CONDITIONS [J].