REACTIVE ION ETCHING OF COPPER-FILMS

被引:70
作者
SCHWARTZ, GC
SCHAIBLE, PM
机构
关键词
D O I
10.1149/1.2120092
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1777 / 1779
页数:3
相关论文
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[1]   MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J].
MAUER, JL ;
LOGAN, JS ;
ZIELINSKI, LB ;
SCHWARTZ, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1734-1738
[2]   REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J].
SCHAIBLE, PM ;
METZGER, WC ;
ANDERSON, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :334-337