A LARGE-SIGNAL MODEL FOR THE GAAS-MESFET

被引：27

作者：

MADJAR, A ^{[1
]}

ROSENBAUM, FJ ^{[1
]}

机构：

[1] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1981年 / 29卷 / 08期

关键词：

D O I：

10.1109/TMTT.1981.1130447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：781 / 788

页数：8

共 23 条

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[9] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

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[10]

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