RADIATION RESPONSE OF CMOS SOI DEVICES FORMED BY WAFER BOND AND ETCHBACK

被引：7

作者：

PALKUTI, LJ ^{[1
]}

LING, P ^{[1
]}

LEONOV, P ^{[1
]}

KAWAYOSHI, H ^{[1
]}

ORMOND, R ^{[1
]}

YUAN, J ^{[1
]}

机构：

[1] UNIVERSAL SEMICOND,SAN JOSE,CA 94086

来源：

关键词：

D O I：

10.1109/23.25515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1653 / 1656

页数：4

共 11 条

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HEMMENT, PLF
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 570 - 572
[3] DERSERTENNE B, 1988, 1988 EUR SOI WORKSH
[4] FLEETWOOD D, 1988, IEEE NUCL S
[5] LASKY JB, 1985, IEDM DEC, P6844
[6] LEE CT, 1988, IEEE DEVICE LETT, V9
[7] MAGEE TJ, 1984, ELIMINATION EXCESSIV
[8] Ohashi H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P210
[9] SYB CK, 1988, 1988 ANN SPR M JAP S
[10] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME
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SCHLOTTERER, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1017 - 1023