ORIGIN OF THE BLUESHIFT IN THE INTERSUBBAND INFRARED-ABSORPTION IN GAAS/AL0.3GA0.7AS MULTIPLE QUANTUM-WELLS

被引：57

作者：

MANASREH, MO ^{[1
]}

SZMULOWICZ, F ^{[1
]}

VAUGHAN, T ^{[1
]}

EVANS, KR ^{[1
]}

STUTZ, CE ^{[1
]}

FISCHER, DW ^{[1
]}

机构：

[1] UNIV DAYTON,RES INST,DAYTON,OH 45469

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.43.9996

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intersubband transition (IT) in GaAs/Al0.3Ga0.7As multiple-quantum-well samples measured by the infrared-absorption technique at 5 K is studied as a function of the two-dimensional electron-gas density (sigma). A blueshift in the peak-position energy of the IT is observed as sigma-increases. Single-particle calculations of the optical-absorption spectra, which are obtained by using the nonparabolic-anisotropic envelope-function approximation (EFA), indicate that the peak-position energy should show a redshift as sigma is increased. We found that it is necessary to incorporate many-body corrections (in particular electron-electron intrasubband exchange and direct Coulomb interaction energies), depolarization, and excitonlike shifts in the EFA calculations in order to account for the experimental peak-position energy and blueshift as sigma is increased.

引用

页码：9996 / 9999

页数：4

共 21 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].