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ELECTRICAL-PROPERTIES OF CHEMICAL-DOPED AND ION-IMPLANTED POLYACETYLENE FILMS

被引：14
作者：
LIN, SH
SHENG, KL
RONG, TW
BAO, JR
WANG, WM
WAN, HH
ZHOU, ZY
ZHU, XF
YANG, FJ
机构：
[1] Shanghai Institute of Nuclear Research, Academia Sinica, Shanghai, 201800
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷
关键词：
D O I：
10.1016/0168-583X(91)95806-O
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The electrical properties of chemical-doped and ion-implanted polyacetylene films are studied. Large increases in p-type conductivity upon chemical doping using FeCl3 and K+ ion-implanted samples in n-type conductivity are observed. A method of combining chemical doping with low energy ion implantation (30 keV K+) makes it possible to fabricate a stable diode-like PA at the near-surface region. The current density of the polymeric diode can be raised as high as 600 mA/cm2 at 3 V, and the backward-to-forward ratio of current can be 500. As for the conductivity enhancement mechanism in ion-implanted PA films, conductive dangling bond and free radical formation by the implantation induced defects are discussed.
引用
收藏
页码：1257 / 1262
页数：6
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