ION-BEAM MODIFICATION OF POLYACETYLENE FILMS

被引：20

作者：

LIN, SH ^{[1
]}

SHENG, KL ^{[1
]}

BAO, JR ^{[1
]}

RONG, TW ^{[1
]}

ZHOU, ZY ^{[1
]}

ZHANG, LP ^{[1
]}

ZHU, DZ ^{[1
]}

SHEN, ZQ ^{[1
]}

YAN, MJ ^{[1
]}

机构：

[1] ZHEJIANG UNIV,DEPT CHEM,HANGZHOU,PEOPLES R CHINA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90895-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：778 / 782

页数：5

共 15 条

[1]

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[2]

Allen WW, 1980, J SYNTH MET, V1, P151

[3] POLYACETYLENE, (CH)X - N-TYPE AND P-TYPE DOPING AND COMPENSATION [J].

CHIANG, CK ;

GAU, SC ;

FINCHER, CR ;

PARK, YW ;

MACDIARMID, AG ;

HEEGER, AJ .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :18-20

[4]

Davenas J., 1983, Journal de Physique Colloque, V44, P183, DOI 10.1051/jphyscol:1983337

[5] ION-BEAM EFFECTS IN DIACETYLENES [J].

ELMAN, BS ;

BLACKBURN, GF ;

THAKUR, MK ;

SANDMAN, DJ ;

SAMUELSON, LA ;

KENNESON, DG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :872-877

[6] METAL POLYACETYLENE SCHOTTKY-BARRIER DIODES [J].

KANICKI, J .

MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1984, 105 (1-4) :203-217

[7] APPLICATION OF ION-IMPLANTATION FOR DOPING OF POLYACETYLENE FILMS [J].

KOSHIDA, N ;

WACHI, Y .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :436-437

[8] ELECTRICAL-PROPERTIES OF ION-IMPLANTED POLYACETYLENE FILMS [J].

KOSHIDA, N ;

SUZUKI, Y .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) :5487-5488

[9]

SHEN ZQ, 1983, SCIENTIA SINICA B, P120

[10]

SUZUKI Y, 1986, CHEM SOC JAPAN, P295

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