VACUUM CHEMICAL EPITAXIAL-GROWTH OF GAAS FILMS USING DIMETHYLAMINE GALLANE

被引：3

作者：

MALOCSAY, E ^{[1
]}

SUNDARAM, V ^{[1
]}

FRAAS, L ^{[1
]}

MELAS, A ^{[1
]}

机构：

[1] MORTON INT,DANVER,MA 01923

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90440-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown high purity, high quality, epitaxial GaAs layers using a new gallium precursor, dimethylamine gallane. DMA-Ga is an organometallic source of gallium which can be used by low pressure epitaxial reactors. This molecule does not contain gallium-carbon bonds and therefore, GaAs layers with low carbon backgrounds can be grown. Using DMA-Ga, we have grown n-type GaAs layers with background donor concentrations of 5 x 10(14) cm-3, room temperature mobilities of 7840 cm2/V.s, and liquid nitrogen mobilities of 60,000 cm2/V.S. Photoluminescence spectra at 4.2 K show strong narrow exciton peaks. We compare these results with those obtained using other gallium sources, namely, triethylgallium and trisobultylgallium. We believe that this compound will promote the use of high vacuum epitaxy reactors (VCE, MOMBE, and CBE) as production tools for the preparation of high performance compound semiconductor devices.

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页码：76 / 80

页数：5

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