EFFECT OF SOURCE CHEMISTRY AND GROWTH-PARAMETERS ON ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：39

作者：

ABERNATHY, CR ^{[1
]}

PEARTON, SJ ^{[1
]}

BAIOCCHI, FA ^{[1
]}

AMBROSE, T ^{[1
]}

JORDAN, AS ^{[1
]}

BOHLING, DA ^{[1
]}

MUHR, GT ^{[1
]}

机构：

[1] AIR PROD & CHEM INC,ALLENTOWN,PA 18195

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 110卷 / 03期

关键词：

D O I：

10.1016/0022-0248(91)90283-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the effect of V/III ratio and substrate temperature on the growth rate, Al composition, crystallinity, and impurity concentration of AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE). The effect of these growth parameters on the deposition rates of both GaAs and AlAs has also been determined. By comparing films grown from various combinations of triethylgallium (TEGa), trimethylgallium (TMGa), triethylaluminum (TEA1), and trimethylamine alane (TMAA1), we have been able to further identify the surface reactions which are most important in determining film composition and quality.

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页码：457 / 471

页数：15

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