GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY

被引：64

作者：

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

机构：

[1] AT&T ENGN RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2302 / 2307

页数：6

共 24 条

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