GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE

被引：95

作者：

ABERNATHY, CR ^{[1
]}

JORDAN, AS ^{[1
]}

PEARTON, SJ ^{[1
]}

HOBSON, WS ^{[1
]}

BOHLING, DA ^{[1
]}

MUHR, GT ^{[1
]}

机构：

[1] AIR PROD & CHEM INC,ALLENTOWN,PA 18195

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 26期

关键词：

D O I：

10.1063/1.102866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500°C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675°C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE-grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl.

引用

页码：2654 / 2656

页数：3

共 13 条

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