CHARACTERIZATION OF LPCVD ALUMINUM FOR VLSI PROCESSING

被引:84
作者
LEVY, RA
GREEN, ML
GALLAGHER, PK
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D O I
10.1149/1.2116043
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2175 / 2182
页数:8
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共 9 条
[1]  
COOKE MJ, 1982, SOLID STATE TECH DEC, P62
[3]   EFFECTS OF SPUTTER ETCHING AND PROCESS TECHNIQUES ON THE PROPERTIES OF SPUTTERED ALUMINUM FILMS [J].
MCLEOD, PS ;
HUGHES, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :369-376
[4]  
Mole T., 1972, ORGANOALUMINIUM COMP, P85
[5]   AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS [J].
NAGUIB, HM ;
HOBBS, LH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :573-577
[6]  
Parrillo L. C., 1982, International Electron Devices Meeting. Technical Digest, P706
[7]  
SAKHAROVSKAYA GB, 1974, J GEN CHEM USSR, V44, P560
[8]  
Vaidya S., 1980, 18th Annual Proceedings of Reliability Physics, P165, DOI 10.1109/IRPS.1980.362934
[9]   ELECTROMIGRATION IN FINE-LINE SPUTTER-GUN AL [J].
VAIDYA, S ;
FRASER, DB ;
LINDENBERGER, WS .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4475-4482