AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS

被引：39

作者：

NAGUIB, HM ^{[1
]}

HOBBS, LH ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 04期

关键词：

D O I：

10.1149/1.2133353

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：573 / 577

页数：5

共 23 条

[1] THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS [J].

ANSTEAD, RJ ;

FLOYD, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :381-&

[2] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES [J].

BASTERFIELD, J ;

SHANNON, JM ;

GILL, A .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :290-&

[3] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[4] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[5]

BERGER HH, 1969, DIGEST TECH PAP ISSC, P160

[6]

CARD HC, 1975, DEC P IEEE EL DEV M, P288

[7] BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J].

CHINO, K .

SOLID-STATE ELECTRONICS, 1973, 16 (01) :119-&

[8] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&

[9]

HOPPER RC, 1965, P ENGINEERING SEMINA, P45

[10]

HOPPER RC, 1965, SOLID STATE ELECTRON, V8, P831

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