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DIFFERENCE IN LIGHT-INDUCED ANNEALING BEHAVIOR OF DEPOSITION-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：5
作者：
HATA, N
MATSUDA, A
机构：
[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki 305
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期
关键词：
D O I：
10.1063/1.110610
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
First experimental results on light-induced annealing (LIA) of deposition-induced defects (DID) in hydrogenated amorphous silicon (a-Si:H) are reported. LIA of DID and of light-induced defects (LID) showed a big difference: the reduction in density of DID by LIA is as low as one third or less of LID reduced by LIA, while thermal annealing reduced DID and LID very similarly. Those results indicate a structural difference between DID and LID, and are discussed in connection with a structural model of a-Si:H.
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页码：1948 / 1950
页数：3
相关论文
共 34 条
[1]   POTENTIAL FLUCTUATIONS DUE TO INHOMOGENEITY IN HYDROGENATED AMORPHOUS-SILICON AND THE RESULTING CHARGED DANGLING-BOND DEFECTS [J].
BRANZ, HM ;
SILVER, M .
PHYSICAL REVIEW B, 1990, 42 (12) :7420-7428
[2]  
DELAHOY AE, 1987, AIP C P, V157, P263
[3]   LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458
[4]  
GANGULY G, 1992, PHYS REV B, V47, P3661
[5]  
GRIMBERGEN M, 1991, AIP CONF PROC, V234, P138, DOI 10.1063/1.41021
[6]  
GUENS M, 1992, APPL PHYS LETT, V61, P678
[7]   ANALYSIS OF LIGHT-INDUCED DEGRADATION IN AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J].
HACK, M ;
SHUR, M .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1656-1661
[8]   STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].
HAN, D ;
FRITZSCHE, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400
[9]   SATURATION OF THE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON BY PULSED-LIGHT SOAKING [J].
HATA, N ;
GANGULY, G ;
WAGNER, S ;
MATSUDA, A .
APPLIED PHYSICS LETTERS, 1992, 61 (15) :1817-1819
[10]   TEMPERATURE AND INTENSITY DEPENDENCE OF THE SATURATED DENSITY OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
HATA, N ;
ISOMURA, M ;
WAGNER, S .
APPLIED PHYSICS LETTERS, 1992, 60 (12) :1462-1464
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